| PART |
Description |
Maker |
| P4C1049L-70L36MB P4C1049-45JMB P4C1049-55JMB P4C10 |
HIGH SPEED 512K x 8 STATIC CMOS RAM 高速为512k × 8静态CMOS存储
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 25 ns, PDFP36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 20 ns, PDFP36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 35 ns, PDFP36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 35 ns, CDSO36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 35 ns, PDSO36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 25 ns, CDSO36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 70 ns, CDSO36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 45 ns, PDFP36
HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 70 ns, PDFP36
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| CY7C1012DV3307 CY7C1012DV33-8BGXC |
12-Mbit (512K X 24) Static RAM 512K X 24 STANDARD SRAM, 8 ns, PBGA119
|
Cypress Semiconductor, Corp.
|
| TC554001FTI-85 TC554001FTI-10 |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器（为512k字8静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| TC554001FTI-85V TC554001FI-85V |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器（为512k字8静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| IS61VF51218A-6.5B3 |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| CY7C1062AV25-10BGC CY7C1062AV25-10BGI |
512K x 32 Static RAM 512K X 32 STANDARD SRAM, 10 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY62148EV30LL-45ZSXA |
4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 2.20 to 3.60 V; 512K X 8 STANDARD SRAM, 45 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
| IDT70V7339S IDT70V7339S200BFI IDT70V7339S133DD IDT |
HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V的为512k × 18 SYNCHRONOU开户银行可切换双端口静态RAM.5V的接
HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 512K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 512K X 18 DUAL-PORT SRAM, 10 ns, PQFP144
|
Integrated Device Technology, Inc.
|
| CY62157DV30 CY62157DV30LL-70ZXI CY62157DV30L CY621 |
8-Mbit (512K x 16) MoBL Static RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
8-Mbit (512K x 16) MoBL Static RAM 8兆位（为512k × 16）的MoBL静态RAM
8-Mbit (512K x 16) MoBL Static RAM 512K X 16 STANDARD SRAM, 55 ns, PBGA48
8-Mbit (512K x 16) MoBL Static RAM 512K X 16 STANDARD SRAM, 45 ns, PDSO44
Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:20-39
Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:20-39
Bundled Coaxial Cable; Impedance:75ohm; Conductor Size AWG:30; No. Strands x Strand Size:7 x 38; Jacket Material:Polyvinylchloride (PVC); Conductor Material:Copper; Conductor Plating:Tin; Jacket Color:Matte Black RoHS Compliant: Yes
Coaxial Cable; Conductor Size AWG:30; No. Strands x Strand Size:7 x 38; Jacket Material:Polyvinylchloride (PVC); Number of Conductors:1; Voltage Nom.:600V RoHS Compliant: Yes
Quadruple 2-Input Positive-OR Gate 14-TSSOP -40 to 85
8-Mbit (512K x 16) MoBL(R) Static RAM
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| W963A6BBN80E |
512K WORD X 16 BIT LOW POWER PSEUDO SRAM 512K X 16 PSEUDO STATIC RAM, 75 ns, PBGA48
|
Winbond Electronics, Corp.
|
