| PART |
Description |
Maker |
| M65KA128AE |
Low Power SDRAM
|
STMicroelectronics
|
| EM669325BG-8G EM669325BG-7.5G EM669325 EM669325BG- |
4M x 32 Low Power SDRAM (LPSDRAM)
|
ETRON[Etron Technology, Inc.]
|
| EM66932ABG-8G EM66932ABG-7.5G EM66932A EM66932ABG- |
4M x 32 Hand-Held Low Power SDRAM (LPSDRAM)
|
ETRON[Etron Technology, Inc.]
|
| HYB25L256160AF-7.5 HYE25L256160AF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications
|
Infineon
|
| V55C2128164VB V55C2128164VT V55C2128164V |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| HYB18L256160BC-7.5 HYE18L256160BC-7.5 HYB18L256160 |
Very low Power SDRAM optimized for battery-powered, handheld applications
|
Infineon
|
| V55C2128164V |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic, Corp.
|
| K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC |
Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronics Inc
|
| EP7312-CV-C EP7311 EP7311-1 |
HIGH-PERFORMANCE LOW-POWER SYSTEM-ON-CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE
HIGH-PERFORMANCE/ LOW-POWER SYSTEM-ON-CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE
From old datasheet system
|
ETC[ETC]
|
| EP7312-IB-C EP7312-CV-C |
High-performance, low-power system on chip with SDRAM and enchanced digital audio interface
|
Cirrus Logic
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
