| PART |
Description |
Maker |
| SS10PH10-M3-86A SS10PH10-M3-87A SS10PH10HM3-86A SS |
High Current Density Surface Mount High Voltage Schottky Rectifiers
|
Vishay Siliconix
|
| SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE
FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
High Voltage,High Density Fast Recovery Rectifier(反向电压4000V，温55℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压6000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压12000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压2000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(反向电压10000V，温5℃时平均整流电流1.5A,高压，高密度，快速恢复整流器)
High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
|
Semtech Corporation
|
| SS15P50 |
High Current Density Surface Mount
|
Bruckewell Technology LTD
|
| ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
In-System Programmable High Density PLD
100 MHz in-system prommable high density PLD
|
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| SSA23L |
High-Current Density Surface Mount Schottky Rectifier
|
Shenzhen Taychipst Electronic Co., Ltd
|
| SS3P5 SS3P6HE3/84A SS3P6-E3/84A SS3P6-E3/85A SS3P6 |
High-Current Density Surface Mount Schottky Rectifier
|
Vishay Siliconix
|
| SS10PU50 |
High Current Density Surface Mount Schottky Rectifier
|
Bruckewell Technology LTD
|
| ESH1PA |
High Current Density Surface Mount Ultrafast Rectifiers
|
Vishay Siliconix
|
| IPT0806-SEI |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| IPT1608-SEB |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
