| PART |
Description |
Maker |
| VMM15-045 |
Dual Power MOSFET Modules
|
IXYS[IXYS Corporation]
|
| PST593DM PST592C PST592CM PST591JM PST591H PST591H |
30V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7901D1 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a TSSOP-8 package; A IRF7752 with Standard Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7301 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7303 with Lead Free Packaging
200V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package.; A IRFI4020H-117P with Standard Packaging 电压检测器
Voltage Detector 电压检测器
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF9956 with Standard Packaging 电压检测器
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF9952 with Lead Free Packaging 电压检测器
|
NXP Semiconductors N.V.
Intersil, Corp.
|
| FMM140-004PL FMM140-004P |
MOSFET Modules
Trench Power MOSFET
|
IXYS Corporation
|
| SKM181A3 |
Power MOSFET Modules
|
Semikron
|
| SKM313B010 |
Power MOSFET Modules
|
Semikron International
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| APS-9112048 APRS-1120 |
Dual -48 V DC power entry modules
|
List of Unclassifed Manufacturers
|
| UPB555C |
Low Power Dual Modules Prescaler
|
NEC Electronics
|
| HUF76105DK8 FN4380 HUF76105DK8T |
5A/ 30V/ 0.050 Ohm/ Dual N-Channel/ Logic Level UltraFET Power MOSFET
From old datasheet system
5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
5A, 30V, 0.050 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(5A, 30V, 0.050 Ω,双N沟道,逻辑电平,UltraFET功率MOS场效应管)
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SO 5 A, 30 V, 0.072 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
Intersil Corporation
Intersil, Corp.
|
| HYS72D64320HU-6-C HYS64D16301HU-5-C HYS64D16301HU- |
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
184-Pin Unbuffered Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| 2N4118A SST4119 2N4117A 2N4119A PN4117A PN4118A PN |
N-Channel JFETs
IC FTDI2232L USB/SERIAL 48-LQFP
MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:12V; Case style:SO-8; Current, Id cont:4.8A; Current, Idm pulse:-20A; Power, Pd:1.1W; Resistance, Rds on:0.035R; SMD:1;
MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:3.6A; Current, Idm pulse:40A; Power, Pd:1.1W; Resistance, Rds on:0.06R; SMD:1;
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
