| PART |
Description |
Maker |
| X2864HJ-70 X2864BPI-18 X2864HJ-90 X2864BGM-12 X286 |
10MS, 8 PDIP, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, SOT23, IND TEMP, GREEN, 1.8V(SERIAL EE)
32M CONFIG FLASH, 44 PLCC, IND(FPGA)
10 MHZ, 8 LAP, IND TEMP(FPGA)
25NS, 24 SOIC, IND TEMP(EPLD)
10MS, 8 TSSOP, EXT TEMP, 2.7V(SERIAL EE)
DIE SALE,1.8V, 11MIL(SERIAL EE)
10MHZ, 8 PDIP, IND TEMP(FPGA)
10MHZ, 20 PLCC, COM TEMP(FPGA)
10MHZ, 44 TQFP, COM TEMP(FPGA)
128Kx8 EEPROM
20NS,CERDIP,883C; LEV B FULLY COMPLIANT(EPLD)
10MHZ, 20 SOIC, COM TEMP, 5K MOQ(FPGA)
10 MHZ, 20 PLCC, IND TEMP, GREEN(FPGA) x8的EEPROM
30MHZ, 3.3V, 8 LAP, COM TEMP(FPGA) x8的EEPROM
10MHZ, 20 PLCC, IND TEMP(FPGA) x8的EEPROM
30MHZ, 20 PLCC, IND TEMP, GREEN(FPGA) x8的EEPROM
|
ITT, Corp.
Pericom Technology (Shanghai) CO., Ltd.
Diodes, Inc.
Electronic Theatre Controls, Inc.
|
| C2111 P2111 AM9111C/BVA AM91L11A/BVA AM91L11C/BVA |
Turbo 2 ultrafast high voltage rectifier
10MHZ, SOIC, IND TEMP, 1.8V(MCU AVR)
20MHZ, PDIP, IND TEMP, 5V(MCU AVR)
2MHz, NARROW SOIC, IND TEMP, GREEN,(MCU AVR)
10MHZ, PDIP, IND TEMP, 1.8V(MCU AVR)
x4 SRAM x4的SRAM
|
Energizer Holdings, Inc.
|
| 0201595 |
Cross connection rail, for fixed bridging of identical inputs and outputs, made of Cu, nickel-plated, 1 m long
|
PHOENIX CONTACT
|
| PUMA2X0214I-9035 PUMA2X0214I-9045 PUMA2X0214I-9055 |
10MS, DIE, 1.8V, 9 MIL THICKNESS(SERIAL EE)
10MS, 8 SOIC, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 TSSOP, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 TSSOP, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 SOIC, EXT TEMP, 2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN, 1.8V(SERIAL EE)
SRAM/EPROM 静态存储器/存储
8 ULTRA THIN,MINI MAP,PB/HALO FREE,IND T(SERIAL EE) 静态存储器/存储
10MS, 8 TSSOP, EXT TEMP, GREEN,2.7V(SERIAL EE) 静态存储器/存储
10MS, 8 SOIC, INT TEMP, GREEN, 1.8V(SERIAL EE) 静态存储器/存储
|
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
Maxim Integrated Products, Inc.
|
| AM7202A-30/BXA AM7202-80JC AM7202-80RC AM7202-80DC |
45NS, PLCC, IND TEMP(FLASH)
55NS, VSOP, IND TEMP(FLASH)
55NS, TSOP, IND TEMP(FLASH)
120NS, PLCC, COM TEMP(FLASH)
120NS, PLCC, IND TEMP(FLASH)
x9 Asynchronous FIFO X9热卖异步FIFO
55NS, PLCC, IND TEMP(FLASH) X9热卖异步FIFO
45NS, TSOP, IND TEMP(FLASH) X9热卖异步FIFO
|
Weidmuller, Corp.
Rochester Electronics, LLC
|
| L08053R9CEWTR L08051R2CEWTR L08053R3CEWTR L08052R7 |
IND 3.9UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF 1 ELEMENT, 0.0039 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
IND 1.2UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF 1 ELEMENT, 0.0012 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
IND 3.3UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF 1 ELEMENT, 0.0033 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
IND 2.7UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF 1 ELEMENT, 0.0027 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
IND 6.8UH 0.5UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF 1 ELEMENT, 0.0068 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
IND 2.7UH 0.5UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF 1 ELEMENT, 0.0027 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
IND 15.0UH 5% THIN-FILM SMD-0603 TR-7 NI/SN-PB RF 1 ELEMENT, 0.015 uH, GENERAL PURPOSE INDUCTOR, SMD
IND 22.0UH 5% THIN-FILM SMD-0805 TR-7 NI/SN-PB RF
INDUCTOR, 0805 CASE, 3.3NH; Inductor type:High Frequency / RF; Series:Accu-L; Inductance:3.3nH; Tolerance, inductance: /-15.15%; Resistance:0.11R; Current, DC max:1500mA; Frequency, resonant:10000MHz; Case style:0805; Q factor:38; RoHS Compliant: Yes
IND 15.0UH 5% THIN-FILM SMD-0805 TR-7 NI/SN-PB RF
|
AVX, Corp.
AVX CORP
|
| 5962-08A0101VXC 5962-08A0101QXC AT7911E-14 |
Triple SpaceWire links High Speed Controller
3 identical bidirectional SpaceWire links allowing
|
ATMEL Corporation
|
| AM29SL800CB-100WBI AM29SL800CT-100WBC AM29SL800CT- |
10MS, 8 TSSOP, IND TEMP, GREEN, 2.7V(SERIAL EE) x8/x16闪存EEPROM
x8/x16 Flash EEPROM x8/x16闪存EEPROM
10MS, 8 PDIP, IND TEMP, GREEN, 2.7V(SERIAL EE) x8/x16闪存EEPROM
10MS, 8 SOIC, IND TEMP, GREEN, 1.8V(SERIAL EE) x8/x16闪存EEPROM
|
Spansion, Inc.
GE Security, Inc.
Amphenol, Corp.
STMicroelectronics N.V.
Lattice Semiconductor, Corp.
|
| TLP4592G |
The Toshiba TLP4592G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package.
|
Toshiba Semiconductor
|
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