| PART |
Description |
Maker |
| IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 SP000 |
OptiMOST Power-Transistor ㈢的OptiMOS - T的功率晶体管
OptiMOS㈢-T Power-Transistor
OptiMOS?-T Power-Transistor
|
Infineon Technologies AG
|
| SPP02N80C3 SPA02N80C3 |
Cool MOS™ Power Transistor
Cool MOS Power Transistor
Cool MOS& Power Transistor
Cool MOS™ Power Transistor
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
INFINEON[Infineon Technologies AG]
|
| 2SB1186A 2SD1763A 2SB1569 2SB1569A 2SD2400A 2SB123 |
POWER TRANSISTOR 功率晶体
Power Transistor (-160, -1.5A)
From old datasheet system
1.5 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-220FN
|
Rohm Co., Ltd.
ROHM[Rohm]
|
| 2SB1555B 2SB1555 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS
3-Pin, Ultra-Low-Power SC70/SOT µP Reset Circuits
|
TOSHIBA
|
| MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| BUZ101 C67078-S1350-A2 BUZ101E3045 BUZ101STS |
N-Channel SIPMOS Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) 29 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
http://
|
| IPB070N06NG IPP070N06NG |
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管
|
Infineon Technologies AG
|
| BUZ101L C67078-S1355-A2 BUZ101LE3045A |
N-Channel SIPMOS Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
From old datasheet system
SIPMOS ? Power Transistor
|
SIEMENS[Siemens Semiconductor Group]
Infineon
http://
|
