| PART |
Description |
Maker |
| R2000F R4000 R2000 |
HIGH VOLTAGE RECTIGIERS
|
HY ELECTRONIC CORP.
|
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| MSK613-15 MSK613H |
Ultra Low Quiescent Current - ±10mA for High Voltage
HIGH VOLTAGE/HIGH SPEED SURFACE MOUNT AMPLIFIER
|
M.S. Kennedy Corporatio...
Anaren Microwave
|
| 2SC3675 |
900V/100mA High-Voltage Amplifier High-Voltage Switching Applications
High-Voltage Amp, High-Voltage Switching Applications
High-Voltage Amp High-Voltage Switching Applications
High-Voltage Amp/ High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC4632LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1200V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| MSK610 MSK610-15 MSK610B |
VERY WIDE BANDWIDTH HIGH VOLTAGE AMPLIFIER
Ultra Low Quiescent Current - ±12mA for High Voltage Stage
|
Anaren Microwave
M.S. Kennedy Corporatio...
|
| 2SA1831 0165 |
PNPTriple Diffused Planar Silicon Transistors High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system
|
Sanyo
|
| 2SA1413-Z |
High Voltage: VCEO=-600V High speed:tr 1.0ìs Collector to Base Voltage VCBO -600 V
|
TY Semiconductor Co., Ltd
|
| 2SC5466 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING AND HIGH VOLTAGE AMPLIFIER APPLICATIONS.
|
TOSHIBA
|
