| PART |
Description |
Maker |
| 6N60L-BTA3-R 6N60-BTA3-R 6N60L-BTA3-T 6N60-BTA3-T |
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 六点二安培，600/650伏特N通道MOSFET
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
|
| CM75DY-12H |
Dual IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| CM75E3U-12H |
Chopper IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| VIO50-06P1 VII50-06P1 VDI50-06P1 VID50-06P1 |
CONN/6 POS HDR SHRD SGL RA LK 42.5 A, 600 V, N-CHANNEL IGBT
IGBT Modules in ECO-PAC 2 42.5 A, 600 V, N-CHANNEL IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| CM75BU-12H |
Four IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT
Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| MGP11N60E_D ON1851 MGP11N60E ON1848 |
From old datasheet system
IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
SHORT CIRCUIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
ONSEMI[ON Semiconductor]
|
| APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation
http://
Microsemi, Corp.
|
| STB11NM60-1 STB11NM60T4 |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
STMICROELECTRONICS
|
| STD3NK60ZD |
N-channel 600 V, 3.3 Ω, 2.4 A, DPAK SuperFREDMesh?/a> Power MOSFET
N-channel 600 V, 3.3 ヘ, 2.4 A, DPAK SuperFREDMesh⑩ Power MOSFET
|
STMicroelectronics
|
