| PART |
Description |
Maker |
| MMBTH10 MMBTSA1037 MMBTSA1162 MMBTSA1182 1SS390 MM |
NPN Silicon VHF/UHF Transistor
PNP Silicon Epitaxial Planar Transistor
SILICON EPITAXIAL PLANAR DIODE
NPN Silicon Epitaxial Planar Transistors
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
PNP SILICON EPITAXIAL POWER TRANSISTOR
BAND SWITCHING DIODE
SILICON EPITAXIAL PLANAR SWITCHING DIODE
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
SEMTECH ELECTRONICS LTD...
|
| DCJ010 1185 |
Silicon Epitaxial Planar Type Diode High-Speed Switching Diode
From old datasheet system
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| MA2S377 |
Silicon epitaxial planar type UHF BAND, 3.1 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| SSM5G02TU-14 |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| MA27V17 |
Silicon epitaxial planar type UHF BAND, 2.98 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
|
| SSM5H08TU-14 |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| MA27V12 |
Silicon epitaxial planar type For VCO UHF BAND, 3.75 pF, 8 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
|
| SSM5H14F |
Silicon N Channel MOS Type (U-MOS?/Silicon Epitaxial Schottky Barrier Diode
Silicon N Channel MOS Type (U-MOS楼虏)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| KDV175E |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|
| KDV144EL |
Silicon Epitaxial PIN Type Diode.
|
Korea Electronics (KEC)
|
| 1S2095A |
SILICON EPITAXIAL PLANAR TYPE DIODE
|
TOSHIBA[Toshiba Semiconductor]
|
| KDV142V-15 |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|
