PART |
Description |
Maker |
ZXTP19060C ZXTP19060CG ZXTP19060CGTA |
60V PNP medium transistor in SOT223
|
Diodes Incorporated Zetex Semiconductors
|
FCX591-15 |
60V PNP MEDIUM POWER TRANSISTOR IN SOT89
|
Diodes Incorporated
|
ZXTP25060BFHTA ZXTP25060BFH |
60V, SOT23, PNP medium power transistor
|
ZETEX[Zetex Semiconductors]
|
ZXTP2027FTA ZXTN2018F ZXTP2027F |
60V, SOT23, PNP medium power transistor
|
ZETEX[Zetex Semiconductors]
|
ZX5T1951GTA |
60V PNP MEDIUM POWER TRANSISTOR IN SOT223
|
Diodes Incorporated
|
ZXTP2012G-16 |
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR
|
Diodes Incorporated
|
ZXTP2012ASTOA ZXTP2012ASTZ ZXTP2012A ZXTP2012A-15 |
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
|
Diodes Incorporated ZETEX[Zetex Semiconductors]
|
ZX5T951G-15 |
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
|
Diodes Incorporated
|
ZX5T951G ZX5T951GTA ZX5T951GTC |
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
|
ZETEX[Zetex Semiconductors]
|
ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C) TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五(巴西)总裁| 3.5AI(丙)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 3A条一c)| TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 10A条一(c)|1 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 8A条一(c)| TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 3A条一(c)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五(巴西)总裁|5A一(c
|
Cypress Semiconductor, Corp. Vicor, Corp. Atmel, Corp. Advanced Analogic Technologies, Inc. EPCOS AG
|
2SB1561 |
Medium Power Transistor (-60V -2A 60V 2A)
|
ROHM[Rohm]
|
CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|