PART |
Description |
Maker |
BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
BF1206 |
Dual N-channel dual-gate MOS-FET
|
NXP Semiconductors
|
BF998RAW-GS08 BF998RBW-GS08 BF998A-GS08 BF998RA-GS |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
VISHAY SEMICONDUCTORS Vishay Siliconix
|
3SK296ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82A, CMPAK-4 Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
3SK290 |
Silicon N Channel MOS FET Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system P-channel MOS FET (-60V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
BF1105R |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
BF991 |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|