| PART |
Description |
Maker |
| IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| FS50SMJ-3 |
Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use
|
Mitsubishi Electric Corporation
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| FL16KM-6A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| 2SK1861 |
Power MOSFETs / VR Series
|
Shindengen
|
| FL14KM-9A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FS50KMJ-06F |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FS30KMJ-06F |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FY6BGH-02F |
Power MOSFETs: FY Series
|
Mitsubishi Electric Corporation
|
| FS4KM-12A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
