| PART |
Description |
Maker |
| CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT
Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| AD1674 AD1674AR AD1674AD AD1674B AD1674JNZ AD1674J |
12-Bit 100 kSPS A/D Converter
12-Bit 100 kSPS A/D Converter(12浣?00kSPS A/D杞????
12-Bit, 100 kSPS, Complete ADC
; Industry Standard SIP7 and DIP14 Packages; Power Sharing on Outputs; Optional Continuous Short Circuit Protected; 1kVDC & 2kVDC Isolation Options
12-Bit 100 kSPS A/D Converter 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, CDIP28
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| PS7206-1A1 PS7206-1A-E3-A PS7206-1A-F3-A PS7206-1A |
4-PIN SOP, 0.6 Ω LOW ON-STATE RESISTANCE 600 mA CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET
4-PIN SOP, 0.6 楼? LOW ON-STATE RESISTANCE 600 mA CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET
|
NEC
|
| NPR2-T221 NHS2-T221 NHR2-T221 NPS2-T220 NPS2-T221 |
RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1; 2; 5 %, 50; 100; 300; 600 ppm, 0.02 ohm - 100000 ohm, THROUGH HOLE MOUNT TO-220
RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1; 2; 5 %, 50; 100; 300; 600 ppm, 0.02 ohm - 100000 ohm, SURFACE MOUNT TO-220
RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1; 2; 5 %, 50; 100; 300; 600 ppm, 0.02 ohm - 100000 ohm, THROUGH HOLE MOUNT TO-221
Power Resistors
|
Riedon, Inc.
Riedon Powertron
|
| PS7113L-2A PS7113-2A PS7113L-2A-E3 PS7113L-1A-E4-A |
6, 8-PIN DIP, 100 V BREAK DOWN VOLTAGE 350 mA CONTINUOUS LOAD CURRENT 1-ch, 2-ch Optical Coupled MOS FET
|
Duracell
California Eastern Labs
|
| IRFR9120 IRFU9120 IRFR91209A |
5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs
|
FAIRCHILD SEMICONDUCTOR CORP
|
| P6SMB47CAT3G |
600 Watt Peak Power Zener Transient Voltage Suppressors 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
|
ON Semiconductor
|
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
| MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 600-052 |
600-052, 600-090, 600-057, 600-083,600-052-1, 600-090-1, 600-057-1 & 600-083-1 Clamping Bands
|
Glenair, Inc.
|
| C390MX500 C390AX500 C390BX500 C390CX500 C390DX500 |
CAP 2700PF 200V 200V X7R RAD.20 .30X.30 BULK R-MIL-PRF-39014 STANDOFF 975 A, 600 V, SCR
Phase Control SCR 620 Amperes Avg 100-600 Volts 975 A, 200 V, SCR
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| X9119TV14 X9119TV14-2.7 X9119TV14I X9119TV14I-2.7 |
IGBT MODULE, 1200V, 54A; Transistor type:IGBT4; Current, Ic continuous a max:56A; Voltage, Vce sat max:2.05V; Case style:MiniSkiiP 2 ; Current, Ic continuous b max:45A; Time, rise:35ns; Voltage, Vce sat typ:1.85V; Voltage, RoHS Compliant: Yes
Single Supply/Low Power/1024-Tap/2-Wire Bus
|
INTERSIL[Intersil Corporation]
|
|
