| PART |
Description |
Maker |
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| SUM85N03-08P |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4890DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4888DY |
N-Channel Reduced Qg/ Fast Switching MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI9422DY |
N-Channel Reduced Qg/ Fast Switching MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI4888DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI4866DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI4824DY |
Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| KI4300DY |
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
|
Guangdong Kexin Industrial Co.,Ltd
|
| DTP4N60 DTU4N60 |
Reduced Gate Drive Requirement
|
DinTek Semiconductor Co,.Ltd
|
| MT49H8M36 MT49H16M18 MT49H32M9 |
288Mb CIO Reduced Latency
|
MICRON[Micron Technology]
|
