PART |
Description |
Maker |
42S32200 IS42S32200-7T IS42S32200-7TI IS42S32200-6 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution Inc
|
IS42S32200-6T IS42S32200-7TI IS42S32200-6TI IS42S3 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc. Integrated Silicon Solu...
|
IS42S32200B-6T IS42S32200B-6TL IS42S32200B-6TI IS4 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solu... Integrated Silicon Solution, Inc.
|
W9816G6IH-5 W9816G6IH-6 W9816G6IH-6I W9816G6IH-7 W |
512K 】 2 BANKS 】 16 BITS SDRAM
|
Winbond
|
W9816G6CH W9816G6CH-5 W9816G6CH-6 W9816G6CH-7 |
512K × 2 BANKS × 16 BITS SDRAM
|
Winbond
|
50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE TECHNOLOGY CO., LTD.
|
IS42S16100-5BL IS42S16100-5TL IS42S16100-6BL IS42S |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
IC42S32200L IC42S32200 IC42S32200_L-6B IC42S32200_ |
512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Circuit Systems ICSI
|
W9816G6JH-5 W9816G6JH-6 W9816G6JH-5-TR W9816G6JH-6 |
512K X 2 BANKS X 16 BITS SDRAM 512K X 2 BANKS X 16 BITS SDRAM
|
Winbond
|
W9816G6BB-7 W9816G6BB |
BGA SDRAM 512K X 2 BANKS X 16 BITS SDRAM From old datasheet system
|
Winbond Electronics
|
IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Integrated Silicon Solution, Inc. 天津新技术产业园区管理委员会
|