| PART |
Description |
Maker |
| 1S1555 1S1553 1S1554 |
Silicon epitaxial planar type diode.
Silicon Epitaxial Planner Type Diode
|
Panasonic
TOSHIBA[Toshiba Semiconductor]
|
| U20GL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MA2C185 MA185 |
Silicon epitaxial planar type 0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2S376 |
Silicon epitaxial planar type UHF BAND, 15 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA3S781E |
Silicon epitaxial planar type (cathode common) 0.03 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2S377 |
Silicon epitaxial planar type UHF BAND, 3.1 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| SSM5H01TU-14 |
Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| MA2B27QB MA2B027 MA2B0270A MA2B0270B MA2B027B MA2B |
Silicon epitaxial planar type variable resistor SILICON, PIN DIODE, DO-35
CANKPT02E16-26SX
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| SSM5H14F |
Silicon N Channel MOS Type (U-MOS?/Silicon Epitaxial Schottky Barrier Diode
Silicon N Channel MOS Type (U-MOS楼虏)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| KDS120V |
SILICON EPITAXIAL TYPE DIODE
|
KEC(Korea Electronics)
|
| 1SV172 |
Diode Silicon Epitaxial Pin Type
|
TOSHIBA
|
| CRZ10 CRZ11 CRZ12 CRZ13 CRZ15 CRZ16 CRZ18 CRZ20 CR |
Zener Diode Silicon Epitaxial Type
|
Toshiba Semiconductor
|
