| PART |
Description |
Maker |
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode
798 nm, LASER DIODE M-272, 12 PIN
|
SONY
NXP Semiconductors N.V.
|
| DL-4038-025 |
High Power AlGaInP Laser Diode(大功率AlGaInP激光二极管)
Red Laser Diode High Power AlGaInP Laser Diode
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| ATR0842 |
4-channel LVDS Laser Diode Driver with High Voltage Output for Blue Laser
|
Atmel
|
| OL3200N-5 OL3200N_5 |
1.3 μm High-Power Laser-Diode DIP Module
1.3 m High-Power Laser-Diode DIP Module
1.3 um High-Power Laser-Diode DIP Module
From old datasheet system
1.3 レm High-Power Laser-Diode DIP Module
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
| DL-3147-041 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
SANYO
|
| DL-3147-021 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
Sanyo Semiconductor
|
| NX5521EH NX5521EK |
LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
Renesas Electronics Corporation
|
