PART |
Description |
Maker |
IDT70P3537S233RM IDT70P3537S250RM |
512K/256K x36 SYNCHRONOUS DUAL QDR-II
|
Integrated Device Technology
|
IDT70P3517 IDT70P3517S233RM IDT70P3517S250RM IDT70 |
512K/256K x36 SYNCHRONOUS DUAL QDR-II
|
Integrated Device Technology
|
IDT71V65803S133BG IDT71V65803S100BQ IDT71V65803S10 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 3.8 ns, PQFP100 256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
CYD01S18V |
FLEx18(TM) 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM
|
Cypress
|
CYD01S18V CYD01S18V-133BBC CYD01S18V-133BBI CYD01S |
FLEx18⑩ 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM
|
Cypress Semiconductor
|
IDT71V67802150BQI IDT71V67802150BG IDT71V67602150P |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36,为512k × 18 3.3同步SRAM.5VI / O的脉冲计数器输出流水线,单周期取 256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect
|
Integrated Device Technology, Inc.
|
MCM63P837ZP200R MCM63P919ZP200R MCM63P837ZP200 MCM |
512K X 18 CACHE SRAM, 3 ns, PBGA119 512K X 18 CACHE SRAM, 2.6 ns, PBGA119 256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
FREESCALE SEMICONDUCTOR INC Motorola, Inc
|
GVT71128DA36T-4 GVT71128DA36B-4 GVT71128DA36B-4.4 |
x18 Fast Synchronous SRAM x18快速同步SRAM x36 Fast Synchronous SRAM x36快速同步SRAM 256K X 18 CACHE SRAM, 2.5 ns, PBGA119
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
MBM29LV400B-10 MBM29LV400B-12 MBM29LV400T-10 MBM29 |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器)
|
Fujitsu Limited
|
GS881E36 GS881E36T-11.5I GS881E36T-66I GS881E36T-1 |
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs 8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位(256K x 36位)ByteSafe同步静态RAM(带2位脉冲地址计数器))
|
http:// GSI Technology
|