PART |
Description |
Maker |
W3E32M64S-250SBI W3E32M64S-200SBM W3E32M64S-200SBC |
32Mx64 DDR SDRAM
|
White Electronic Designs Corporation
|
P13B16212A P13B16212V M464S3254DTS PC133 M464S3254 |
Protective Eyeglasses RoHS Compliant: NA Personal protection, Spectacles; RoHS Compliant: NA Electrically Conductive Floor Mat 1/8 inch x 4 feet x 8 feet RoHS Compliant: NA 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM SODIMM based on 16Mx16 4Banks 8K Refresh3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
W3DG6435V7D2 W3DG6335V10D2 W3DG6335V75D2 W3DG6335V |
256MB - 32Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
WV3EG6434S262BD4 WV3EG6434S335BD4 WV3EG6434S265BD4 |
256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
M368L3223CTL |
32Mx64 DDR SDRAM 184pin DIMM based on 32Mx8 Data Sheet
|
Samsung Electronic
|
M366S3323CT0-C75 M366S3323CT0 |
32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
|
SAMSUNG[Samsung semiconductor]
|
M366S3253CTU |
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
NT256D64S88A2GM NT256D64S88A2GM-7K NT256D64S88A2GM |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM 200pin One Bank Unbuffered DDR SO-DIMM 200pin一个银行缓冲的DDR SO - DIMM插槽
|
NANYA ETC Electronic Theatre Controls, Inc.
|
2SB030070MLJY |
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
|
Silan Microelectronics Joint-stock
|