| PART |
Description |
Maker |
| MA4VAT2007-1061T |
High IIP3 PIN Diode Variable Attenuator 1.70-2.00 GHz
|
MACOM[Tyco Electronics]
|
| MA4VAT904-1061T |
High IIP3 PIN Diode Variable Attenuator (0.80-1.0 GHz)
|
Tyco Electronics
|
| MV1638 MV1628 |
33 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-204AA DO-7, 2 PIN
15 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-204AA DO-7, 2 PIN
|
ON Semiconductor
|
| BAR63-02L BAR63-02V BAR63-07L4 BAR63-04W BAR63-03W |
Silicon PIN Diodes 硅PIN二极
PIN Diodes - PIN diode for high-speed switching of RF signals
PIN Diodes - High-Speed switching diode in ultra-small SC79 Package
|
INFINEON[Infineon Technologies AG]
|
| AT10-0019-TB AT10-0019TR |
PIN Diode Based Variable Attenuator, 50 - 1000 MHz
50-1000 MHz, PIN diode based variable attenuator
|
Tyco Electronics
MA-Com
|
| MMVL809T1 MMVL809T1G |
UHF BAND, 5.3 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN
Silicon Tuning Diode
|
ONSEMI[ON Semiconductor]
|
| BM831 BM831-18 |
0.7~1.4GHz High IIP3 GaAs MMIC Mixer with Integrated LO AMP
|
BeRex Corporation
|
| MMBV2104L MMBV2104LT1 MMBV2104LT3 |
UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE CASE 318-07, 3 PIN
|
Motorola Mobility Holdings, Inc.
|
| 1N74 1N60D 1N68A 1N96A 1N72 1N73 1N93 1N63 1N61 1N |
Diode Switching 100V 10A 2-Pin
Diode Switching 50V 3A 2-Pin Case A
GOLD BOUNDED GERMANUM DIODE
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R
Diode Switching 125V 0.0003A 2-Pin DO-35
Diode Switching 50V 0.005A 2-Pin Case H
GOLD BONDED GERMANIUM DIODES
|
New Jersey Semiconductor
|
| JDV2S29SC |
UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE LEAD FREE, SC2, 1-1R1A, 2 PIN
|
Toshiba, Corp.
|
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
