PART |
Description |
Maker |
PM20CSJ060 PM400DAS060 PM100DSA120 PM300CVA060 PM3 |
IPMS Modules: 600V MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE IPMS Modules:1200V 50Amp - intelligent power modules
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Mitsubishi Electric Corporation
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PDCS6112 PDCS6112H PDCS6112V PDCS6190 PDCS6190H PD |
DC/DC POWER MODULES 1 AMP ADJUSTABLE
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Premier Magnetics, Inc.
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MCC162-18IO1 MCC162-14IO1 MCD162-18IO1 MCD162-12IO |
Thyristor and Rectifiers Modules PC Board Connector; No. of Contacts:8; Pitch Spacing:3.96mm; No. of Rows:1; Mounting Type:PCB Thru-hole; Body Material:PA Polyamide (Nylon); Contact Thyristor Modules Thyristor/Diode Modules 300 A, 1400 V, SCR Thyristor Modules Thyristor/Diode Modules 晶闸管模块可控硅/二极管模 Thyristor Modules Thyristor/Diode Modules 300 A, 800 V, SCR Thyristor Modules Thyristor/Diode Modules 300 A, 1800 V, SCR
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IXYS[IXYS Corporation] IXYS, Corp.
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SPM4M024-100 SPC8M075-006 SPC8M045-010 SPC8M030-02 |
6 A, 1000 V, 2 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 130 A, 60 V, 0.006 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 120 A, 300 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 40 A, 600 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 350 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 45 A, 100 V, 0.03 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 300 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
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Sensitron Semiconductor http://
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MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172- |
High Power Diode Modules 大功率二极管模块 High Power Diode Modules 190 A, 1600 V, SILICON, RECTIFIER DIODE High Power Diode Modules 190 A, 800 V, SILICON, RECTIFIER DIODE High Power Diode Modules 190 A, 1800 V, SILICON, RECTIFIER DIODE Thyristor and Rectifiers Modules
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IXYS, Corp. IXYS Corporation
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IRKLF132 2213 IRKHF152-04HL IRKLF132-08HL IRKLF152 |
INT-A-pak Power Modules(可控二极H结构INT-A-pak功率模块) 相依甲柏功率模块(可控硅/二极结构相依甲柏功率模块 INT-A-pak Power Modules(可控可控L结构INT-A-pak功率模块) INT-A-pak Power Modules(可控二极管H结构INT-A-pak功率模块) From old datasheet system FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
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International Rectifier, Corp.
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VBO65-12NO7 VBO65-16NO7 VBO65-08NO7 VBO65-14NO7 VB |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
VUO85-16NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
VUB50-16PO1 |
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS
|
PM15CNJ060 E80271 E80276 |
MITSUBISHI <INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE 三菱\u003cINTELLIGENT POWER MODULES\u003e平性基地型绝缘包装 INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE MITSUBISHI FLAT-BASE TYPE INSULATED PACKAGE IPMS Modules: 600V
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
LT1097S8TRPBF |
Low Cost, Low Power Precision Op Amp; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C OP-AMP, 130 uV OFFSET-MAX, 0.7 MHz BAND WIDTH, PDSO8 Low Cost, Low Power Precision Op Amp(浣?环锛?????绮惧?杩???惧ぇ?ī
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Linear Technology, Corp. Linear Technology Corporation
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