| PART |
Description |
Maker |
| P35-4104-0 |
160K POWER-MANAGED PIC W/96K/80K BYTES & ECAN, -40C to 85C, 44-QFN, TUBE 模拟IC
|
Molex, Inc.
|
| P4C187-20CMB P4C187L-25CMB P4C187L-45JMB P4C187-45 |
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 25 ns, CDIP22
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 45 ns, PDSO24
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 超高4K的1静态CMOS五羊
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 超高4K的1静CMOS五羊
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 15 ns, QCC22
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| KM6161000B |
64K x16 Bit Low Power CMOS Static RAM(64K x16浣?????CMOS ???RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W29N102C |
64K×16bit CMOS 3.3V Flash Memory(64K×16位以3.3V电源供电的CMOS闪速存储器)
|
Winbond Electronics Corp
|
| AT28LV64B DOC233 AT28LV64B-20JC AT28LV64B-20TC AT2 |
64K (8K x 8) Low Voltage CMOS
From old datasheet system
64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection
|
ATMEL[ATMEL Corporation]
|
| AT27C520 AT27C520-70 AT27C520-70SC AT27C520-70SI A |
512K 64K x 8 Multiplexed Addresses/ Outputs OTP EPROM 64K X 8 OTPROM, 70 ns, PDSO28
ECONOLINE: RY-S_DCP - Internal SMD Technology- 1kVDC Isolation- Short Circuit Protection: Current Limit- UL94V-0 Package Material- Regulated Output- No External Components Required- Efficiency to 63% 64K X 8 OTPROM, 90 ns, PDSO28
ECONOLINE: RY-S_DCP - Internal SMD Technology- 1kVDC Isolation- Short Circuit Protection: Current Limit- UL94V-0 Package Material- Regulated Output- No External Components Required- Efficiency to 63% 64K X 8 OTPROM, 70 ns, PDSO20
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AT27LV512A AT27LV512A-12 AT27LV512A-12JC AT27LV512 |
High Speed CMOS Logic Quad Bilateral Switches 14-SOIC -55 to 125 64K X 8 OTPROM, 150 ns, PQCC32
High Speed CMOS Logic Quad Bilateral Switches 14-TSSOP -55 to 125 64K X 8 OTPROM, 90 ns, PQCC32
512K 64K x 8 Low Voltage OTP CMOS EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| AS7C31026 AS7C31026-10 AS7C31026-10BC AS7C31026-10 |
5V/3.3V 64K16 CMOS SRAM
8-Bit Parallel-Load Shift Registers 16-SOIC -40 to 85
CONN SOCKET IC 16-PIN SMD
8-Bit Parallel-Load Shift Registers 16-TSSOP -40 to 85
CONN SOCKET IC 18-PIN SMD
8-Bit Parallel-Load Shift Registers 16-SO -40 to 85 64K X 16 STANDARD SRAM, 20 ns, PBGA48
5V/3.3V 64Kx6 CMOS SRAM 5V/3.3V 64Kx6 CMOS SRAM
5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 20 ns, PDSO44
5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 20 ns, PBGA48
5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
ETC[ETC]
Alliance Semiconductor, Corp.
|
| IS62WV6416DALL/DBLL IS65WV6416DALL/DBLL IS62WV6416 |
64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
64K X 16 STANDARD SRAM, 35 ns, PBGA48
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| W29C102P-70B W29C102Q-90B W29C102Q-70 W29C102Q-70B |
64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 70 ns, PQCC44
64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 90 ns, PDSO40
64K 16 CMOS FLASH MEMORY 64K X 16 FLASH 5V PROM, 70 ns, PDSO40
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
