| PART |
Description |
Maker |
| 2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
TOSHIBA
|
| TDA7266L TDA266L |
5W MONO BRIDGE AMPLIFIER 5W单声道桥式放大器
AUDIO AMPLIFIER,SINGLE,SIP,10PIN,PLASTIC
7 7W DUAL BRIDGE AMPLIFIER
From old datasheet system
|
STMicroelectronics N.V.
ST Microelectronics
|
| 2SA1932 |
POWER AMPLIFIER APPLICATIONS DRIBVER STAGE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| EN8278B CPH5901F-TL-E CPH590112 CPH5901G-TL-E CPH5 |
N-Channel JFET and NPN Bipolar Transistor, 15V, 6 to 20mA, 50V, 150mA, Composite type CPH5
High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| AMMC-5618 AMMC-5618-W10 AMMC-5618-W50 |
6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
6 - 20 GHz Amplifier
AMMC-5618 · 6-20 GHz Amplifier
|
AGILENT TECHNOLOGIES INC
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| S1724BBBA S1724BDBA S1724CBBA S1724CDBA S1724DDBA |
Optical amplifier platform, erbium-doped fiber amplifier. P0=16.0 dBm. Connector FC/PC. Without heat sink.
Optical Amplifier Platform1724-Type Eribium-Doped Fiber Amplifier(S and V Series)
Optical Amplifier Platform/1724-Type Eribium-Doped Fiber Amplifier(S and V Series)
Optical Amplifier Platform,1724-Type Eribium-Doped Fiber Amplifier(S and V Series) 光放大器平台,1724 -型Eribium铒光纤放大器（S和V系列
BOARD INTERFACE KGZ/GMS 0-25%
Optical amplifier platform, erbium-doped fiber amplifier. P0=13.0 dBm. Connector FC/PC. Without heat sink.
|
AGERE[Agere Systems]
ERICSSON
Austin Semiconductor, Inc
|
| GC509 GC509-CHIP GC509-MCRO |
AUDIO AMPLIFIER, PDSO10
GC509 - Class A Amplifier with 3 Independent Gain Blocks GC509 - A类放大器3独立增益模块
AUDIO AMPLIFIER, UUC10
|
GENNUM[Gennum Corporation]
Samsung Semiconductor Co., Ltd.
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| FH103 1283 |
High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications
NPN Epitaxial Planar Silicon Composite Transistor
From old datasheet system
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| BA3308/F |
Audio LSIs > Pre amplifier/Line amplifier > Pre amplifier
|
ROHM
|
| UPC1688G UPC1688G-T1 UPC1688G-T2 UPC1688G-T2-A |
1100 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER MINIMOLD, 4 PIN
IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,BIPOLAR,SOT-143R,4PIN,PLASTIC
5 V, 1.1 GHz WIDE BAND AND FLAT GAIN AMPLIFIER SILICON MMIC 5伏，1.1 GHz的宽频带及平坦增益放大器单片
|
NEC[NEC]
NEC Electronics Corp
NEC Corp.
NEC, Corp.
|
