| PART |
Description |
Maker |
| IBM0418A86SQKA IBM0418A86LQKA IBM0418A86LQKA-6 IBM |
8 Mb Synchronous Communication SRAM(8M位同步流水线式通讯静态RAM) 8兆同步通信的SRAM00万位同步流水线式通讯静态内存）
x36 Fast Synchronous SRAM x36快速同步SRAM
x18 Fast Synchronous SRAM x18快速同步SRAM
|
IBM Microeletronics
International Business Machines, Corp.
Advanced Interconnections, Corp.
|
| UPD4382322GF-A67 UPD4382362GF-A67 UPD4382162GF-A75 |
x32 Fast Synchronous SRAM
x16 Fast Synchronous SRAM
x18 Fast Synchronous SRAM
x36 Fast Synchronous SRAM x36快速同步SRAM
|
Lumex, Inc.
|
| 74AC11163N 74ACT11163N 74AC11163D |
5 V, synchronous presettable synchronous 4-bit bunary counter, asynchronous reset
|
Philips
|
| 74ACT11161N 74AC11161D |
5 V, synchronous presettable synchronous 4-bit bunary counter, asynchronous reset
|
Philips
|
| 82P33731 82P33731ABAG |
Synchronous Equipment Timing Source for 10G/ 40G Synchronous Ethernet
|
ON Semiconductor
Integrated Device Techn...
|
| 74LV163 74LV163D 74LV163DB 74LV163N 74LV163PW 74LV |
Presettable synchronous 4-bit binary counter; synchronous reset
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 74LVX163MTCX 74LVX163MX 74LVX163SJX |
Low Voltage Synchronous Binary Counter with Synchronous Clear
|
Fairchild Semiconductor
|
| EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM
256Mb (2MBank2) Synchronous DRAM 256Mb的（200万?4Bank2）同步DRAM
256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| IRFH4251DPBF |
Control and Synchronous MOSFETs for synchronous buck converters
|
International Rectifier
|
| TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM)
8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM)
4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM）的
16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
