| PART |
Description |
Maker |
| RF-5800H-MP |
advanced hf/VHF tactical radio system
|
Harris Corporation
|
| RF-5800M-MP |
FALCON II Advanced tactical radio system
|
Harris Corporation
|
| KDV154 KDV154A KDV154B |
TV VHF, UHF tuner AFC VCO for UHF band radio
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| KDV153 KDV153A KDV153B KDV153D |
TV VHF, UHF tuner AFC VCO for UHF band radio
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1SV304 |
VARIABLE CAPACITANCE DIODE (VCO FOR VHF BAND RADIO)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
|
Mitsubishi Electric Corporation
|
| QA-1500 |
High-g tactical navigation sensor
|
Honeywell Accelerometers
|
| MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| TBB101006 TBB1010KMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| MMBTH10-4LT1 MMBTH10L MMBTH10LT1G MMBTH10LT1 |
Small Signal VHF Mixer
VHF/UHF Transistor (NPN Silicon)
|
ONSEMI[ON Semiconductor]
|
| TBB1010 |
Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
