| PART |
Description |
Maker |
| BL-BD1X0209 |
Chip material: AlGaAs/GaAs
|
BRIGHT LED ELECTRONICS CORP
|
| BM-08K88MD |
super red chips, which are made from AlGaAs on AlGaAs substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-08K88ND |
super red chips, which are made from AlGaAs on AlGaAs substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| MADP-000910-13050T MA4AGCP910 MA4AGFCP910 |
AlGaAs Flip-Chip PIN Diode 100MHz to 50GHz
|
MACOM[Tyco Electronics]
|
| HLMP-D150C0000 HLMP-K150C0000 HLMP-D150C0001 HLMP- |
T-1 (3 mm). Low Current. Double Heterojunction AlGaAs Red LED Lamp 的T 1毫米）。低电流。双异质结AlGaAs的红色LED
T-1 3/4 (5 mm). Low Current. Double Heterojunction AlGaAs Red LED Lamp 的T 1 3 / 4毫米）。低电流。双异质结AlGaAs的红色LED
T-1 3/4 (5 mm). Low Current. Double Heterojunction AlGaAs Red LED Lamps
T-13/4 (5 mm), T-1 (3 mm), Low Current, Double Heterojunction AlGaAs Red LED Lamps
|
Avago Technologies, Ltd.
NXP Semiconductors N.V.
Agilent(Hewlett-Packard)
|
| HSDL-4260 |
High-Power T-1篓煤 (5mm) AlGaAs Infrared (875nm) Lamp
High-Power T-1? (5mm) AlGaAs Infrared (875nm) Lamp
|
Lite-On Technology Corporation
|
| HSDL-4270 |
High-Performance T-1篓煤 (5mm) AlGaAs Infrared (940nm) Lamp
High-Performance T-1? (5mm) AlGaAs Infrared (940nm) Lamp
|
AVAGO TECHNOLOGIES LIMITED
|
| MA4AGBLP912 |
AlGaAs Beamlead PIN Diode
|
M/A-COM Technology Solutions, Inc.
|
| QEE273 |
AlGaAs Infrared Emitting Diode
|
Fairchild Semiconductor
|
| F5E3 F5E1 F5E2 |
AlGaAs INFRARED EMITTING DIODE
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| MA4AGSW5 MA4AGSW5V5 |
SP5T AlGaAs PIN Diode Switch
|
M/A-COM Technology Solutions, Inc.
|
