PART |
Description |
Maker |
EIA1818-2P EIB1818-2P |
18.15-18.75GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
TIM1314-30L09 |
HIGH POWER P1dB=45.0dBm at 13.75GHz to 14.5GHz
|
Toshiba Semiconductor
|
TIM5964-16SL-422 |
IM3=-45 dBc at Pout= 31.5dBm G1dB=8.0dB(min) at 5.85GHz to 6.75GHz
|
Toshiba Semiconductor
|
BTA16-600SW3G BTA16-600SW3 |
Triac, 3 Quadrant Internally Isolated, 10 mA I-GT, 16 A I-T(RMS) 600V 16 A, 10mA Igt 3 Quadrant Internally Isolated Triac
|
On Semiconductor
|
JM38510 AD532J AD532JCHIP AD532JD AD532JH AD532K A |
Internally Trimmed Integrated Circuit Multiplier 16-bit 40MSPS Low Power ADC with Selectable LVDS/CMOS Outputs 48-VQFN -40 to 85 IC-MONOLITHIC MULTIPIER Internally Trimmed Integrated Circuit Multiplier ANALOG MULTIPLIER OR DIVIDER, 1 MHz BAND WIDTH, CDIP14 Internally Trimmed Integrated Circuit Multiplier ANALOG MULTIPLIER OR DIVIDER, 1 MHz BAND WIDTH, MBCY10
|
AD[Analog Devices] Analog Devices, Inc.
|
MGFL45V1920A |
1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFK35V4045 K354045 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET From old datasheet system 14.0~14.5GHZ BAND 3W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS45V2123 S452123 |
2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET From old datasheet system 2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
28C64AT/P 28C64ATI/L 28C64AFTI/SO 28C64AFI/SO 28C6 |
64K (8K x 8) CMOS EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
|
Microchip Technology Inc. Microchip Technology, Inc.
|
MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|