| PART |
Description |
Maker |
| LHF16KA1 LH28F160S3NS-L10 |
Flash Memory 16M (2MB 8/1MB 16) 闪存16M内存MB的/1MB6
Flash Memory 16M (2MB bb 8/1MB bb 16)
Flash Memory 16M (2MB × 8/1MB × 16)
|
Sharp, Corp.
Sharp Electrionic Components
|
| LH28F160S3HT-L10A LHF16KA7 |
Flash Memory 16M (2MB x 8/1MB x 16)
Flash Memory 16M (2MB bb 8/1MB bb 16)
|
SHARP
|
| LH28F160S3HT-L10A LHF16KA7 |
Flash Memory 16M (2MB 】 8/1MB 】 16)
Flash Memory 16M (2MB 8/1MB 16)
|
SHARP[Sharp Electrionic Components]
|
| LHF16KA4 LH28F160S5NS-L70 |
Flash Memory 16M (2MB bb 8/1MB bb 16)
Flash Memory 16M (2MB 8/1MB 16)
Flash Memory 16M (2MB × 8/1MB × 16)
|
Sharp Corporation
Sharp Electrionic Components
|
| M29W160 M29W160BB M29W160BB120N1T M29W160BT120M6T |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory
16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory 16兆位Mb x8兆x16插槽，引导块低压单电源闪
|
ST Microelectronics
IXYS, Corp.
STMicroelectronics N.V.
|
| M29W160DT90ZA6T M29DCL3-16T M29W160DB M29W160DB70M |
From old datasheet system
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29F160BB M29F160BT 6678 |
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)Single Supply Flash Memory
From old datasheet system
|
STMicro
|
| M29W160DB90N1 M29W160DB70M1 |
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory 16兆位（含2Mb x8兆x16插槽，引导块V电源快闪记忆
|
意法半导
STMicroelectronics N.V.
|
| M27V201 M27V201-100B1TR M27V201-100B6TR M27V201-10 |
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-SSOP -40 to 85 2兆位56Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储
2.5-V/3.3-V 16-Bit Transparent D-Type Latches With 3-State Outputs 48-TSSOP -40 to 85 2兆位56Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM 2兆位56Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储
2.5-V/3.3-V 16-Bit Bus Transceivers With 3-State Outputs 48-TSSOP -40 to 85 2兆位256Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM 2兆位256Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储
2.5-V/3.3-V 16-Bit Bus Transceivers With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 2兆位256Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储
2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-SSOP -40 to 85
2.5-V/3.3-V 16-Bit Bus Transceivers With 3-State Outputs 48-TVSOP -40 to 85
2.5-V/3.3-V 16-Bit Bus Transceivers With 3-State Outputs 48-SSOP -40 to 85
2.5-V/3.3-V 16-Bit Transparent D-Type Latches With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85
Fuse Holder; Mounting Type:PC Board; For Use With:PC Board Fuses; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Voltage Rating, AC:250V; Voltage Rating, DC:450V; Accessory Type:Mounting Socket
2.5-V/3.3-V 16-Bit Transparent D-Type Latches With 3-State Outputs 48-SSOP -40 to 85
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-TVSOP -40 to 85
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-TSSOP -40 to 85
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM
NND - 2 MBIT (256KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| IS61NVP6436A-200TQI IS61NVP12818A-250TQ IS61NVP128 |
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 18 ZBT SRAM, 3.1 ns, PQFP100
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 18 ZBT SRAM, 2.6 ns, PQFP100
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solution...
|
| MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM)
32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出，流通式同步脉冲静态RAM)
64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆，3.3V的输输出，流通式同步脉冲静态内存）
|
Micron Technology, Inc.
|
