| PART |
Description |
Maker |
| MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
NXP Semiconductors N.V.
M/A-COM Technology Solutions, Inc.
|
| U1FWJ44M |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATIONS
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| ZHCS400 |
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
|
SUNMATE electronic Co.,...
|
| B1100 B1X-13-F B190B-13-F B190-13 B170B-13 B170B-1 |
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
RECTIFIER SCHOTTKY SINGLE 1A 63V 30A-Ifsm 0.79Vf 0.5A-IR SMB 5K/REEL 1 A, 90 V, SILICON, SIGNAL DIODE
RECTIFIER SCHOTTKY SINGLE 1A 70V 30A-Ifsm 0.79Vf 0.5A-IR SMB 5K/REEL 1 A, 100 V, SILICON, SIGNAL DIODE
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
|
Diodes Incorporated
Diodes, Inc.
|
| HSB0104YP |
Silicon Schottky Barrier Diode for High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| HSB276AYP |
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
|
| HSB88YP |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
| HRW26 |
Silicon Schottky Barrier Diode for High Frequency Rectifying
|
Hitachi Semiconductor
|
| HSB88WA |
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
RENESAS[Renesas Electronics Corporation]
|
| SMS3940-029LF |
SILICON, HIGH BARRIER SCHOTTKY, C BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
| HSM226S |
Silicon Schottky Barrier Diode for High speed switching
|
Renesas Electronics Corporation
|
| HSU227 |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
