| PART |
Description |
Maker |
| RF-310M-HH |
SUITE B COMPATIBLE MULTIBAND HANDHELD RADIO
|
Harris Corporation
|
| 1SV30407 |
VCO for VHF Band Radio
|
Toshiba Semiconductor
|
| M48-169-BIM1H |
VHF 500mW RS232 radio modem
|
Radiometrix Ltd
|
| 1SV305 |
VARIABLE CAPACITANCD DIODE (VCO FOR VHF BAND RADIO)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC1946A SC1946A |
From old datasheet system
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC1970 SC1970 |
From old datasheet system
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC1947 SC1947 |
From old datasheet system
NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Microsemi, Corp.
|
| 2SC1729 SC1729 |
NPN EPITAXIAL PLANAR TYPE(RF power amplifiers on VHF band mobile radio)
From old datasheet system
NPN EPITAXAIL PLANAR TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TBB1010KMTL-H TBB101011 |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| MMBTH10-4LT1 MMBTH10L MMBTH10LT1G MMBTH10LT1 |
Small Signal VHF Mixer
VHF/UHF Transistor (NPN Silicon)
|
ONSEMI[ON Semiconductor]
|
