| PART |
Description |
Maker |
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| F49L400BA |
4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory 4兆位（为512k × 8/256K × 16V时仅闪存的CMOS
|
Elite Semiconductor Memory Technology, Inc.
|
| CY7C1357C-100BZC CY7C1357C-100BZI CY7C1357C-100BZX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL垄芒 Architecture
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL?/a> Architecture
|
Cypress Semiconductor
|
| CY14B104L CY14B104L-BV45XCT CY14B104L-BV45XI CY14B |
4-Mbit (512K x 8/256K x 16) nvSRAM
|
http://
Cypress Semiconductor
|
| CY14E104L-BA45XCT CY14E104N-BA45XCT CY14E104L-ZS25 |
4 Mbit (512K x 8/256K x 16) nvSRAM
|
http://
Cypress Semiconductor
|
| CY7C1363C-133AXC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 6.5 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
| E28F004BX-B80 E28F004BX-B60 E28F004BX-T120 28F400B |
4-MBIT (256K X 16. 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY 4兆位56 × 16。为512k × 8）启动块闪存系列
OSC 5V SMT PLAS 14X9 CMOS
LENS, ROUND, RED; Colour:Red; Diameter, external:29mm RoHS Compliant: Yes
Series RR3130 round rocker switches have an ergonomic euro design and panel mounting
ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
Evaluation Kit for the MAX5944
Series RR3112 round rocker switches have an ergonomic feel and multiple circuit options
4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16/ 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Electronic Theatre Controls, Inc.
PROM
Intel Corp.
Intel Corporation
|
| CY7C1362C-166AJXC CY7C1362C-166AJXI CY7C1362C-166A |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM
|
Cypress Semiconductor
|
| BBF2805SE BBF2815S BBF2812S BBF2805SK BBF2803SH BB |
3.3V, 20W DC-DC converter
15V, 20W DC-DC converter
12V, 20W DC-DC converter
Analog IC
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL™ Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
20W DC-DC Converter(输出功率20WDC-DC转换
|
M.S. Kennedy Corp.
M.S. Kennedy Corporation
|
| F49L400BA-90T F49L400UA-70T F49L400UA-90T |
4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
|
Elite Semiconductor Memory Technology Inc.
|
| GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology, Inc.
|
