| PART |
Description |
Maker |
| RA07M4452M RA07M4452M-01 RA07M4452M-E01 |
440-520MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA55H4452M-101 RA55H4452M10 |
440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA45H4452M11 |
RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semicon...
|
| RA30H4452M10 |
440-520MHz 30W 12.5V MOBILE RADIO
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| RA30H4552M110 |
450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| 444CNQ045 |
440 Amp Schottky Rectifier(440 A 肖特基整流器)
|
International Rectifier
|
| 2MP04-060-10 2MP04-060-12 2MP04-060-15 2MP04060 |
Specifications
The series of two-stage TE modules has been designed for applications where a relatively large cold side is required as well as two-stage level cooling.
|
RMT Ltd.
|
| 2MP04-096 2MP04-096-15 2MP04-096-10 2MP04-096-12 2 |
Specifications
The series of two-stage TE modules has been designed for applications where a relatively large cold side is required as well as two-stage level cooling.
|
RMT Ltd.
|
| RD07MVS1B |
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
|
Mitsubishi Electric Semiconductor
|
