| PART |
Description |
Maker |
| XS3R-M426-1 XS3R-M426-1011-A XS3R-M426-1020-A XS3R |
Round Water-resistant Connectors (M8)
|
Omron Electronics LLC
|
| XS2U-2221 XS2U-2222 XS2U-3121 XS2U-3122 XS2M-D824- |
Round Water-resistant Connectors (M12)
|
Omron Electronics LLC
|
| ZCS1-120A1DC12VC521 ZCS1-120A1DC14VC521 ZCS1-120A1 |
WATER RESISTANT SOLENOID
WATER RESISTANT SOLENOID
|
American Zettler, Inc.
|
| PV6F240NSG-201 PV6F240NSG-211 PV6F240NSG-221 PV6F2 |
Vandal and Water Resistant, Long Life Expectancy CONTACT RESISTANCE: 50mOHM Max.
|
http://
E-SWITCH
|
| 1T412 |
Variable Capacitance Diode
Vandal Resistant Pushbutton Switch; Illumination:Illuminated; Actuator Style:Round; Actuator Diameter:22mm; Circuitry:SPST; Switch Operation:Push
|
SONY[Sony Corporation]
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| S1P2655A03 S1P2655A05 S1P2655A01 S1P2655A02 S1P265 |
Linear integrated circuit. Input level TTL, CMOS
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR SOP-16
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR DIP-16
LT Series Water Resistant Linear Position Transducer, 76,2 mm [3.0 in] Electrical Travel, 1.0 % Linearity, Cable Termination, Item Number F58000203
Level Meter
Linear integrated circuit. Input level DTL, TTL, PMOS, CMOS
|
ITT, Corp.
TE Connectivity, Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MPXHZ6115A MPXHZ6115AC6U MPXAZ6115A MPXAZ6115A6T1 |
Media Resistant and High Temperature Accuracy Integrated Pressure Sensor
Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor
CAP 68UF 6V 20% TANT SMD-6032-28 TR-7
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
| FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSL9130R FN4083 FSL9130R4 FSL9130D FSL9130D1 FSL91 |
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
CAP 1000UF 200V ELECT TS-HB 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSGYE230R4 FSGYE230D1 FSGYE230R FSGYE230R3 FN4853 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
|
