PART |
Description |
Maker |
AT28HC256N-90JI AT28HC256N AT28HC256N-12JI |
256 (32K x 8) High-speed Parallel EEPROM
|
ATMEL[ATMEL Corporation]
|
AT28HC256E-12LM_883 AT28HC256F-12DM_883 AT28HC256F |
256 (32K x 8) High-speed Parallel EEPROM
|
ATMEL Corporation
|
WS57C256F WS57C256F-35 WS57C256F-35C WS57C256F-35D |
-WS57C256F MILITARY HIGH SPEED 32K X 8 CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28 HIGH SPEED 32K x 8 CMOS EPROM 高2K的8的CMOS存储
|
SGS Thomson Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
WS57C71C-3 WS57C71C-5 WS57C71C-55JI WS57C71C-55J W |
HIGH SPEED 32K x 8 CMOS PROM/RPROM 高2K的8的CMOS胎膜早破/ RPROM MILITARY HIGH SPEED 32K x 8 CMOS PROM/RPROM WS57C71C HIGH SPEED 32K X 8 CMOS PROM/RPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] N.A. ST Microelectronics
|
W24257A-15 W24257AK-15 W24257AJ-15 W24257AS-12 W24 |
32K X 8 High Speed CMOS Static RAM 32K X 8 High Speed CMOS Static RAM 32K X 8 STANDARD SRAM, 35 ns, PDIP28 ER 7C 5#16 2#12 PIN RECP WALL ER 4C 3#12 1#8 PIN RECP
|
Winbond Electronics, Corp. Winbond Electronics Corp
|
IDT70V3379S6PRFI IDT70V3379S IDT70V3379S4BC IDT70V |
From old datasheet system HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 32K X 18 DUAL-PORT SRAM, 6 ns, PBGA256 HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 32K X 18 DUAL-PORT SRAM, 6 ns, PQFP128
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
HM62W16255HI HM62W16255HJPI-15 HM62W16255HTTI-15 H |
High-Speed SRAMs 4M High Speed SRAM (256-kword x 16-bit)
|
HITACHI[Hitachi Semiconductor]
|
CAT28LV256H13I-20T CAT28LV256H13I-25 CAT28LV256H13 |
256 kb Parallel EEPROM 32K X 8 EEPROM 3V, 200 ns, PDSO28 256 kb Parallel EEPROM 32K X 8 EEPROM 3V, 250 ns, PDSO28 256 kb Parallel EEPROM 32K X 8 EEPROM 3V, 300 ns, PDSO28
|
ON Semiconductor
|
AS7C513B AS7C513B-20TI AS7C513B-10JC AS7C513B-10JI |
High Speed CMOS Logic 3-to-8 Line Decoder Demultiplexer Inverting and Non-Inverting 16-PDIP -55 to 125 32K X 16 STANDARD SRAM, 10 ns, PDSO44 High Speed CMOS Logic 3-to-8 Line Decoder Demultiplexer Inverting and Non-Inverting 16-SOIC -55 to 125 32K X 16 STANDARD SRAM, 10 ns, PDSO44 5V 32K x 16 CMOS SRAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44 High Speed CMOS Logic 3-to-8 Line Decoder Demultiplexer Inverting and Non-Inverting 16-SOIC -55 to 125 32K X 16 STANDARD SRAM, 12 ns, PDSO44 High Speed CMOS Logic Dual 2-to-4 Line Decoders/Demultiplexers 16-PDIP -55 to 125 SRAM - 5V Fast Asynchronous
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
M27256 M27256-F1 M27256-F6 M27256-4F6 M27256-1F1 M |
NND - NMOS 256 KBIT (32KB X8) UV EPROM NMOS 256K 32K x 8 UV EPROM 32K X 8 UVPROM, 200 ns, CDIP28 32K X 8 UVPROM, 250 ns, CDIP28
|
ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)
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http:// SIEMENS AG
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