| PART |
Description |
Maker |
| GP200MKS12 |
IGBT Chopper Module Preliminary Information 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| SKM145GB063DN SKM145GAL063DN |
Superfast NPT-IGBT Modules 200 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
| DIM200PHM33-A000 |
Half Bridge IGBT Module Preliminary Information 200 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| QIC0620003 |
Dual IGBT Common Emitter Module (200 Amp/600 Volts)
|
Powerex Power Semicondu...
Powerex Power Semiconductors
POWEREX INC
|
| HCPL-3150 |
Single Channel 0.5 Amp Output Current IGBT Gate Drive Optocoupler(单通道 0.5 Amp输出电流 IGBT门驱动耦合 单通道0.5安培的输出电流IGBT栅极驱动光电耦合器（单通道0.5安培输出电流IGBT的门驱动耦合器）
Single Channel 0.5 Amp Output Current IGBT Gate Drive Optocoupler(?????0.5 Amp杈???垫? IGBT?ㄩ┍?ㄨ????
|
Fujitsu, Ltd.
|
| SFF250-61 SFF250/61 |
30 AMP 200 Volts 0.085OHM N-Channel POWER MOSFET 30 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-61
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| FS150R12KE3G |
200 A, 1200 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
|
| APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE
IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| SFF9240M |
-11 AMP -200 VOLTS 0.50 ohm P-Channel Power MOSFET 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254
|
Solid State Devices, Inc.
|
| SFF9240C |
-11 AMP -200 VOLTS 0.50 ohm P-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| SFF9230M |
-6.5 AMP -200 VOLTS 0.80 ohm P-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
