| PART |
Description |
Maker |
| ZHCS1006 ZHCS1006TA |
SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT?/a>
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ??uperBAT??/td>
| SOT-23
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT
DIODE SCHOTTKY SOT-23 肖特基二极管采用SOT - 23
High Current Schottky Diode
|
Fairchild Semiconductor
Zetex Semiconductors
Zetex Semiconductor PLC
|
| TCMBR20100CT TCMBR20150CT TCMBR20200CT |
20A SCHOTTKY BARRIER DIODE Dual High Voltage Schottky Rectifier
|
Tak Cheong Electronics (Holdings) Co.,Ltd
|
| MBR20200CT MBR20100CT |
20A SCHOTTKY BARRIER DIODE Dual High Voltage Schottky Rectifier
|
Tak Cheong Electronics (Holdings) Co.,Ltd
|
| 30FWJ2CZ47M |
SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE LOW FORWARD VOLTAGE SCHOTTKY BARRIER SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
|
TOSHIBA
|
| FME-220A |
Schottky Barrier Diode - 90V/100V
100V, 20A Schottky barrier diode in TO220F package
100V/ 20A Schottky barrier diode in TO220F package
100V, 20A,Schottky Barrier Diode(100V,20A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE, TO-220AB
|
SANKEN[Sanken electric]
Sanken Electric Co., Ltd.
|
| SD101AW SD101BW SD101CW |
SCHOTTKY BARRIER SWITCHING DIODE
(SD101AW - SD101CW) SURFACE MOUNT SCHOTTKY BARRIER DIODE
|
DIODES[Diodes Incorporated]
|
| KDR331E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR378E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| U30FWJ2C53M |
Schottky Barrier Rectifier Stack Trench Schottky Barrier Type Low Forward Voltage Schottky Barrier Type Switching Mode Power Supply Application Converter&Chopper Application
|
TOSHIBA
|
| SCS481N SCS481N-15 |
VOLTAGE 30 V, 0.2 A Schottky Barrier Diode
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
| YG862C12R |
High Voltage Schottky barrier diode
|
Fuji Electric
|
