| PART |
Description |
Maker |
| MA4EX950H-1225 MA4EX950H-1225T |
HMICTM硅双平衡混频器，700 - 1200兆赫
Silicon Double Balanced HMICTM Mixer, 700 - 1200 MHz
|
MACOM[Tyco Electronics]
|
| BCR192T BCR192 BCR192W BCR192F BCR192L3 BCR192U BC |
PNP Silicon Digital Transistor
Thermal power sensor 0 - 40 GHz, 1 W - 100 mW 进步党硅数字晶体
Digital Transistors - R1= 22 kOhm ; R2= 47 kOhm
Digital Transistors - R1=22 kOhm R2=47 kOhm
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BCR141S BCR141FE6327 BCR141L3E6327 BCR141T BCR141U |
Digital Transistors - R1= 22 kOhm ; R2= 22 kOhm SOT363
Digital Transistors - R1= 22 kOhm ; R2= 22 kOhm SC74
Digital Transistors - R1=22 kOhm; R2=22 kOhm
|
Infineon
|
| BCR153T BCR153 BCR153F BCR153L3 BCR153TE6327 BCR15 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm
Digital Transistors - R1=2,2 kOhm R2=2,2 kOhm
PNP Silicon Digital Transistor
|
INFINEON[Infineon Technologies AG]
|
| PDTB113ZT215 PDTB113ZT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| PEMD15 |
NPN/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 4.7 kOhm
|
Philips
|
| DTC114YD |
Dual NPN Bias Resistor Transistors R1 = 10 kOhm, R2 = 47 kOhm
|
ON Semiconductor
|
| PDTC124EEF |
R1 = 22 kOhm, R2 = 22 kOhm
NPN resistor-equipped transistor;
|
Philips
|
| PDTC114EU PDTC114E PDTC114EE PDTC114EEF PDTC114EK |
NPN resistor-equipped transistor; R1 = 10 kohm, R2 = 10 kohm
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
