| PART |
Description |
Maker |
| E142-SERIES M342-SERIES T242-SERIES X242-SERIES E2 |
Transient Voltage Suppressor Diodes
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3910 with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7862PBF with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL2203NS with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB260N with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF9410 with Standard Packaging
250V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU12N25D with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR4343 with Standard Packaging
Peripheral IC 外围芯片
|
Bourns, Inc.
Hoffman
TOKO, Inc.
|
| FDG410NZ |
2200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Single N-Channel PowerTrench垄莽 MOSFET 20 V, 2.2 A, 70 m楼?
Single N-Channel PowerTrench? MOSFET 20 V, 2.2 A, 70 mΩ
|
Fairchild Semiconductor Corporation
|
| FDC855N |
30V Single N-Channel, Logic Level, PowerTrench MOSFET; Package: SSOT-6; No of Pins: 6; Container: Tape & Reel 6100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-193AA
Single N-Channel, Logic Level, PowerTrench㈢ MOSFET 30V, 6.1A, 27mヘ
Single N-Channel, Logic Level, PowerTrench? MOSFET 30V, 6.1A, 27mΩ
|
Fairchild Semiconductor, Corp.
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| FDS6680A FDS6680ANF073 FDS6680ANL |
30V Single N-Channel, Logic Level, Power Trench MOSFET
Single N-Channel, Logic Level, PowerTrench MOSFET 12500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| NTD4863N-35G NTD4863N--1G NTD4863N--35G NTD4863NAT |
Power MOSFET 25 V, 49 A, Single N--Channel, DPAK/IPAK
Power MOSFET 25V, 46A, Single N-Channel 9.2 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| OM60N06SA OM50N05SA OM50N05ST OM50N06SA OM50N06ST |
60V Single N-Channel Hi-Rel MOSFET in a D3 package
60V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
50V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE
50V Single N-Channel Hi-Rel MOSFET in a D3 package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
IRF[International Rectifier]
|
| AM29C509PCB AM29C509-1/BXC AM29C509-1DC AM29C509-2 |
Multiplier/Accumulator
-30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA597Z60 with optional Total Dose Rating of 300kRads
60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 Surface Mount package; Similar to IRHLNA797064 with optional Total Dose rating of 300kRads
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package; A IRHYB67230CM with Standard Packaging
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package; A IRHF57234SE with Standard Packaging
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package; A IRHNJ597034 with Standard Packaging
500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA package; A IRHM7450SE with Standard Packaging 乘法累加
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package; A IRHNA57264SE with Standard Packaging 乘法累加
|
AverLogic Technologies, Corp.
|
| IRHLF740Z4 IRHLF770Z4 IRHLF780Z4 IRHLF730Z4 IRHLF6 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) 抗辐射逻辑电平功率MOSFET通孔（到39
From old datasheet system
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| X24C04V-1.8 X24C04PI-1.8 X24C04V-2.7 X24C04MI-1.8 |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF3709ZCS with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRL3713L with Standard Packaging
I2C Serial EEPROM
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ46NS with Tape and Reel Right Packaging
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR3303 with Standard Packaging I2C串行EEPROM
|
Electronic Theatre Controls, Inc.
|
| IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
