PART |
Description |
Maker |
IS42S32160C IS42S32160C-6BI IS42S32160C-6BL IS42S3 |
16Mx32 512Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc 天津新技术产业园区管理委员会
|
HSD16M32D4-10 HSD16M32D4-10L HSD16M32D4-12 HSD16M3 |
Synchronous DRAM Module 64Mbyte(16Mx32-Bit), 100pin DIMM, 4Banks, 8K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd.
|
IS4346R32160D IS4346R16320D IS4346R86400D IS43R321 |
16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM
|
List of Unclassifed Manufac... Integrated Silicon Solution
|
EM48AM3284LBA-6FH EM48AM3284LBA-6FS EM481M3284LBA- |
512Mb (4M?4Bank?32) Synchronous DRAM 512Mb (4M×4Bank×32) Synchronous DRAM
|
Eorex Corporation http://
|
HYB39S5121600AT-8 HYB39S5121600AT-7 HYB39S5121600A |
512Mb (32M x 16) PC100 2-2-2 Available Q402 512Mb (32M x 16) PC133 2-2-2 Available Q402 512Mb (32M x 16) PC133 3-3-3 Available Q402 128M X 4 SYNCHRONOUS DRAM, 5 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
HY5DS113222FM-28 HY5DS113222FM-33 HY5DS113222FM-36 |
GDDR SDRAM - 512Mb 512M(16Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
K4S510632C K4S510632C-TC7C |
128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
IS42VM16100G IS42VM16100G-6BLI |
512K x16Bits x2Banks Low Power Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60
|
Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC
|
IS42SM32100C IS42RM32100C-6BLI |
512K x32Bits x2Banks Low Power Synchronous DRAM 1M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
|
Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC
|
M52D32162A-7.5BG M52D32162A-10TG |
1M x 16Bit x 2Banks Synchronous DRAM 2M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 1M x 16Bit x 2Banks Synchronous DRAM 2M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
|
Elite Semiconductor Memory Technology, Inc.
|