PART |
Description |
Maker |
EM48BM1644LBA-8FE EM481M1644LBA-75FE EM482M1644LBA |
512Mb (8M】4Bank】16) Synchronous DRAM 512Mb (8M×4Bank×16) Synchronous DRAM 512Mb (8M?4Bank?16) Synchronous DRAM 512Mb (8M隆驴4Bank隆驴16) Synchronous DRAM
|
http:// Eorex Corporation
|
EM48BM1684LBA-6E EM48BM1684LBA-6F EM48BM1684LBA-75 |
512Mb (8M?4Bank?16) Synchronous DRAM 512Mb (8M×4Bank×16) Synchronous DRAM
|
Eorex Corporation http://
|
EM48AM3284LBA-75FE EM48AM3284LBA EM48AM3284LBA-75F |
512Mb (4M×4Bank×32) Synchronous DRAM 512Mb (4M】4Bank】32) Synchronous DRAM
|
http:// ETC[ETC]
|
EM48AM3284LBA |
512Mb (4M X 4Bank X 32) Synchronous DRAM
|
eorex
|
K4S510832B-CL75 K4S510832B-UC75 K4S510432B-CL75 K4 |
512Mb B-die SDRAM Specification 512MB的乙芯片内存规格 32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM) 4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM)的 16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
HY5DS113222FM-28 HY5DS113222FM-33 HY5DS113222FM-36 |
GDDR SDRAM - 512Mb 512M(16Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
IBM03164B9C IBM0316809C |
16Mb Synchronous DRAM(16M位同步动态RAM) 16MbMbit x 8 I/O x 2 Bank)Synchronous DRAM(16M位(1Mx 8 I/O x 2 组)同步动态RAM)
|
IBM Microeletronics
|
K4S510632C K4S510632C-TC7C |
128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
M52D32162A-7.5BG M52D32162A-10TG |
1M x 16Bit x 2Banks Synchronous DRAM 2M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 1M x 16Bit x 2Banks Synchronous DRAM 2M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
|
Elite Semiconductor Memory Technology, Inc.
|