| PART |
Description |
Maker |
| SFT5096G |
1 AMP, 500 Volts High Voltage PNP Transistor
|
Solid States Devices, Inc.
|
| PBHV9115Z |
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV9050Z.115 |
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| 2SA1871 2SA1871-GA1-AZ |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING 进步党三重扩散硅晶体管高速高压开
1 A, 600 V, PNP, Si, POWER TRANSISTOR
High-speed high-voltage switching PNP 3-diffusion trans
|
NEC, Corp.
NXP Semiconductors N.V.
NEC[NEC]
|
| PDTB113ZT215 PDTB113ZT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| ULN2005 ULN2003 ULN2003L ULN2005A ULN2005L ULN2003 |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash Memory IC; Memory Size:64Mbit; Access Time, Tacc:90ns; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow
High Voltage / High Current Darlington Transistor Arrays
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
(ULN2001A - ULN2005A) High Voltage / High Current Darlington Arrays
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
Sprague Electric
ETC[ETC]
List of Unclassifed Manufacturers
VISHAY SPRAGUE
|
| Q62702-F722 BFP23 BFP26 Q62702-F622 |
PNP Silicon Transistor with high Reve...
From old datasheet system
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580
FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| MRF275G MRF275 |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
