| PART |
Description |
Maker |
| PTF191601 PTF191601E |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz
LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
| AGR19125E AGR19125EF AGR19125EU |
125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| AGR19045EF |
45 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| AGR19060E AGR19060EF AGR19060EU |
60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| PH1920-45 |
WIRELESS BIPOLAR POWER TRASISTOR 45W 1930-1990 MHZ
|
Tyco Electronics
|
| PTFB191501E PTFB191501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 ?1990 MHz
|
Infineon Technologies AG
|
| EMRS-6X1_1 EMRS-6X1 EMRS-6X1TR EMRS-6X11 |
E-Series Surface Mount Mixer 925-960 MHz, 1805-1880 MHz, 1930-1990 MHz
|
MACOM[Tyco Electronics]
|
| 1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| FR12-0004 FR11-0004 |
3- Port DROP - IN CIRCULATOR / ISOLATOR 1930 - 1990 MHz
|
MACOM[Tyco Electronics]
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
