| PART |
Description |
Maker |
| UN1221 UN1222 UN1223 UN1224 |
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Silicon NPN epitaxial planer transistor
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| AT25F409606 AT25F4096Y4-10YH-2.7 AT25F4096 AT25F40 |
4Mbit High Speed SPI Serial Flash Memory
|
ATMEL[ATMEL Corporation]
|
| W28F641B |
64MBIT (4MBIT 16) PAGE MODE DUAL WORK FLASH MEMORY
|
Winbond Electronics Corp
|
| ES29DS800FT-70TGI |
4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
Excel Semiconductor Inc.
|
| ES25P40 |
4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface
|
优先(苏州)半导体有限公
|
| ES29BDS160DT-90RTGI ES29BDS160ET-90RTGI ES29BDS320 |
4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
优先(苏州)半导体有限公
|
| ES35P40-75CC2R ES35P40-75CC2T ES35P40-75CC2Y ES35P |
4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface
|
Excel Semiconductor Inc.
|
| ES29LV800DB-90RTG ES29DL400FB-12RTG ES29LV400DB-90 |
4MBIT(512KX 8/256K X 16) CMOS 3.0 VOLT-ONLY, BOOT SECTOR FLASH MEMORY
|
EXCELSEMI[Excel Semiconductor Inc.]
|
| W28F641B W28F641BB80L W28F641BT80L W28F641TB80L W2 |
From old datasheet system
64MBIT (4MBIT 】 16) PAGE MODE DUAL WORK FLASH MEMORY
|
Winbond
|
| ST16CF54LEVELB |
4Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory(4M位低压单电源闪速存储器)
|
意法半导
|
| EN71GL064B0 EN71GL064B0-70CWP |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 64 Megabit (4M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM
|
Eon Silicon Solution Inc.
|
