| PART |
Description |
Maker |
| GC4530-00 GC4531-00 GC4532-00 GC4533-00 GC4511-00 |
CONTROL DEVICES High Voltage NIP Diodes TM
|
Microsemi Corporation
|
| CS20-22MOF1 |
High Voltage Phase Control Thyristorin High Voltage ISOPLUS i4-PAC-TM 28.26 A, 2200 V, SCR
Phase Control Thyristors: PowerThyristor for Line Frequency Rectification
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| TLP2403 |
High-Speed Digital Interfacing for Instrumentation and Control Devices Simplex/Multiplex Data Transmission
|
Toshiba Semiconductor
|
| LC7536R |
High Breakdown Voltage Serial Control Electronic Volume Control
|
SANYO[Sanyo Semicon Device]
|
| 2SA1432 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS.
|
TOSHIBA
|
| 6ED1055-1 6ED1057-4 6ED1058 6ED1052-1 6ED1052-2 3T |
Monitoring and Control Devices
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
List of Unclassifed Man...
|
| SSC1000-25-12 SSC800-25-24 |
Solid-State Panel Mount Relay; Output Device:IGBT; Output Voltage Max:1000VDC; Control Voltage Max:16VDC; Control Voltage Min:8VDC; Load Current Max:25A; Switching:DC Switch; Capacitance:50; Control Voltage (Nominal):12
Solid-State Panel Mount Relay; Output Device:IGBT; Output Voltage Max:800VDC; Control Voltage Max:28VDC; Control Voltage Min:20VDC; Load Current Max:25A; Switching:DC Switch; Capacitance:50; Control Voltage (Nominal):24
|
CRYDOM CORP
|
| IDT72V51453 IDT72V51433 IDT72V51443 |
3.3V MULTI-QUEUE FLOW-CONTROL DEVICES
|
IDT
|
| IDT72T51556 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES
|
IDT
|
| VS-70TPS12PBF |
The 70TPS.. High Voltage Series of silicon controlled rectifiers are specifically designed for high and medium power switching and phase control applications
|
Vishay Siliconix
|
| 2SA1432 |
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
|
Toshiba Semiconductor
|
