| PART |
Description |
Maker |
| M521 |
Positive Voltage Control of GaAs MMIC Control Devices
|
M/A-COM Technology Solutions, Inc.
|
| GC4270 GC4271 GC4220 GC4211 GC4212 GC4222 GC4223 G |
TM CONTROL DEVICES - HIGH SPEED PIN DIODES
|
Microsemi Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| LC7536R |
High Breakdown Voltage Serial Control Electronic Volume Control(高击穿电压串行数据控制电子音量控 高击穿电压串行控制电子音量控制（高击穿电压串行数据控制电子音量控制）
CMOS LSI
|
Sanyo Electric Co., Ltd.
|
| CS20-25MO1F |
High Voltage Phase Control Thyristor in High Voltage ISOPLUS i4-PAC
|
IXYS Corporation
|
| 2SA1091 E000470 |
TRANSISTOR (HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TJA1080 TJA1080TS TJA1080TS_N |
FlexRay transceiver
FlexRay transceiver - Application: Control Devices ; Controller type: Flexray ; Function: Transceivers ; Number of pins: 20 ; Operating temperature: -40~125 Cel; Supply voltage: 5.25 V
|
NXP Semiconductors N.V.
|
| PK3 PK15 |
Pulstors Resistors for high voltage peak pulsing energy control , high frequency non-inductive
|
Willow Technologies Ltd
|
| IDT72V51336 IDT72V51346 IDT72V51356 |
3.3V MULTI-QUEUE FLOW-CONTROL DEVICES
|
IDT
|
|
