| PART |
Description |
Maker |
| HIP2100IBZT HIP2100IRZ HIP2100EIBZ HIP2100IBT HIP2 |
100V/2A Peak High-Frequency Half Bridge Driver with CMOS Logic Inputs; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R 2 A HALF BRDG BASED MOSFET DRIVER, PDSO8
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver 2 A HALF BRDG BASED MOSFET DRIVER, PQCC16
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver 2 A HALF BRDG BASED MOSFET DRIVER, PDSO8
Drives N-Channel MOSFET Half Bridge
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
|
Intersil, Corp.
Intersil Corporation
|
| ICS9169C-273 ICS9169CJ-273 ICS9169CM-273 AV9169CJ- |
Frequency Generator for Pentium⑩ Based Systems
Frequency Generator for Pentium Based Systems
Frequency Generator for PentiumBased Systems
|
ICST[Integrated Circuit Systems]
|
| ICS9169C-271 ICS9169CJ-271 ICS9169CM-271 |
Frequency Generator for PentiumBased Systems
Frequency Generator for Pentium Based Systems
Frequency Generator for Pentium⑩ Based Systems
|
ICST[Integrated Circuit Systems]
|
| FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| EGN21A045I EGN21A045IV |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| ESN35A030MK EGN35A030MK |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| SIC730CD9-T1 |
FAST SWITCHING MOSFETS W/INTEG DRIVER - Tape and Reel
|
Vishay Siliconix
|
| 15GN01MA |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| QPC1006EVB |
0.15 ?2.8 GHz High Power GaN SP3T Switch
|
TriQuint Semiconductor
|
