| PART |
Description |
Maker |
| PBRN123Y PBRN123YK PBRN123YS PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 10 k?
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k??
|
NXP Semiconductors
|
| PBRN113E PBRN113EK PBRN113ES PBRN113ET |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 1 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 1 k? R2 = 1 k?
NPN 800 mA, 40 V BISS RETs; R1 = 1 k搂?, R2 = 1 k搂?
|
NXP Semiconductors
|
| PBRP113ZT PBRP113ZT215 |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| PBSS303NZ |
30 V, 5.5 A NPN low VCEsat (BISS) transistor 30伏，5.5安NPN型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS4520X PBSS4520X-15 |
20 V, 5 A NPN low VCEsat (BISS) transistor 20伏，5安NPN型低饱和压降（BISS）晶体管
NPN low VCEsat (BISS) transistor 20 V, 5 A
|
NXP Semiconductors N.V.
|
| PBSS2540M PBSS2540M315 |
40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| PBSS4041SPN |
60 V NPN/PNP low V_CEsat (BISS) transistor
60 V NPN/PNP low VCEsat (BISS) transistor
60 V NPN-PNP low V_CEsat (BISS) transistor 6700 mA, 60 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS4112PAN |
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS4160PANP |
NPN/NPN low VCEsat (BISS) transistor
|
NXP
|
| FJP5027R FJP5027RTU FJP5027OTU |
3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB TO-220, 3 PIN
NPN Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Rail 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| PBSS4630PA |
30 V, 6 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
|
