| PART |
Description |
Maker |
| MGFC40V5964A |
5.9-6.4 GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V5258_04 MGFC40V5258 MGFC40V525804 |
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| STK401-010 STK400-010 STK401-210 STK400-100 STK400 |
3ch AF Power Amplifier(Split Power Supply) 10W 10W 10W,THD=0.4% 3通道自动对焦功率放大器（斯普利特电源0W0W的功0W，总谐波失真\u003d 0.4
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
ETC
SANYO[Sanyo Semicon Device]
|
| TA040-060-40-40 |
4 - 6 GHz 10W Amplifier
|
Transcom, Inc.
|
| TA099-107-41-40 |
9.9 - 10.7 GHz 10W Amplifier
|
Transcom, Inc.
|
| HMC546MS8G HMC546MS8GE |
GaAs MMIC 10W T/R SWITCH 0.2 - 2.2 GHz
|
Hittite Microwave Corporation
|
| T1G6001032-SM-15 T1G6001032-SM-EVB1 |
10W, 32V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G6000528-Q3-15 T2G6000528-Q3-EVB5 T2G6000528-Q3- |
10W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EIC3135-8 |
3.10-3.50 GHz 8W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
Excelics Semiconductor,...
|
| EIB3439-4P |
3.40-3.90 GHz 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
