| PART |
Description |
Maker |
| PH3230S PH3230S115 |
N-channel Trenchmos (tm) logic level FET; Package: SOT669 (LFPAK); Container: Tape reel smd 107 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235AA
N-channel TrenchMOS logic level FET
N-channel TrenchMOS⑩ logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHP191NQ06LT PHB191NQ06LT |
Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology
PHP/PHB191NQ06LT; N-channel Trenchmos (tm) logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUK9628-100A BUK9528-100A NXPSEMICONDUCTORS-BUK962 |
TrenchMOS transistor Logic level FET 49 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TrenchMOS(tm) transistor Logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK9775-55 BUK9775-56 |
TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET) TrenchMOS（商标）场效应晶体管逻辑电平TrenchMOS（商标）晶体管逻辑电平场效应管
TrenchMOS transistor Logic level FET 11.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHP125N06LT PHB125N06LT PHP125N06L |
TrenchMOS transistor Logic level FET(TrenchMOS 晶体管标准电平场效应 TrenchMOS场效应晶体管逻辑电平TrenchMOS晶体管标准电平场效应管）
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK962R8-30B |
N-channel TrenchMOS logic level FET 75 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| PHD71NQ03LT |
N-channel TrenchMOS logic level FET 75 A, 30 V, 0.0152 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
NXP Semiconductors N.V.
|
| BUK9Y19-75B |
N-channel TrenchMOS logic level FET 48.2 A, 75 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
NXP Semiconductors N.V.
|
| PH955L |
N-channel TrenchMOS logic level FET
|
NXP Semiconductors
|
|
