| PART |
Description |
Maker |
| QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM10MD-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| CM15MD-24H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| VIO125-12P1 VID125-12P1 VDI125-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules 138 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| MII300-12A4 MDI300-12A4 MID300-12A4 |
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules 330 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
| CM30MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| CR6PM-12 CR6PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| RM100CZ-H RM100DZ-H RM100DZ-M RM100CZ-M |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM400HA-2H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM150DY-HBK |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
