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FGP30N6S2 - 600V, SMPS II Series N-Channel IGBT

FGP30N6S2_4611139.PDF Datasheet


 Full text search : 600V, SMPS II Series N-Channel IGBT


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HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60    600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
HGT1S7N60A4S HGTD7N60A4S HGTP7N60A4 HGTG7N60A4 FN4 From old datasheet system
600V SMPS Series N-Channel IGBT
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INTERSIL[Intersil Corporation]
HGTG30N60A4 FN4829 600V/ SMPS Series N-Channel IGBT
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From old datasheet system
INTERSIL[Intersil Corporation]
HGTP3N60A4 HGTD3N60A4 HGTD3N60A4S HGTP3N60A4NL 600V, NPT Series N-Channel IGBT
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
HGTG30N60A4D 600V, SMPS Series N-Channel IGBT with
FAIRCHILD[Fairchild Semiconductor]
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INTERSIL[Intersil Corporation]
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HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723 40A/ 600V/ UFS Series N-Channel IGBTs
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From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
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http://
FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
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HEXFET? Power MOSFET
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600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
IRF[International Rectifier]
International Rectifier, Corp.
 
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