| PART |
Description |
Maker |
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| W9864G6IH |
1M X 4BANKS X 16BITS SDRAM
|
Winbond
|
| HY5W2B6DLF-HE HY5W2B6DLFP-HE |
4Banks x 2M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| HY5Y2B6DLF-HE HY5Y2B6DLFP-HE |
4Banks x 2M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| HY5W6B6DLF-HE HY5W6B6DLF-PE HY5W6B6DLFP-HE HY5W6B6 |
4Banks x1M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| HY5S6B6DLF-BE HY5S6B6DLF-SE HY5S6B6DLFP-BE HY5S6B6 |
4Banks x1M x 16bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
|
| IS42VM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| IS42VM16800F-75BLI |
SYNCHRONOUS DRAM, PBGA54
2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
|
| HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz
4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
| HY57V281620HCTP-H |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
|
Hynix Semiconductor
|
| HYB39S128160CT HYB39S128800CT |
128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM)
128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4× 4M× 8)同步动态RAM) 128兆位banks ×Mb × 8）同步DRAM28M的（4 × 4分列位8）同步动态RAM）的
|
SIEMENS AG
|
| HY62SF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
